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BCW61B | PNP Transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BCW61 series PNP general purpose transistors
Product specification Supersedes data of 1997 May 28 1999 Apr 12
Philips Semiconductors
Product speci |
NXP |
|
BCW61B | PNP Transistor PNP Silicon AF Transistors
BCW 61 BCX 71
q q q q q
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary type |
Siemens Semiconductor Group |
|
BCW61B | PNP Transistor PNP Silicon AF Transistors
• For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW6 |
Infineon |
|
BCW61B | Transistor BCW61A/B/C/D
BCW61A/B/C/D
General Purpose Transistor
3
2
SOT-23 1 1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Paramet |
Fairchild Semiconductor |
|
BCW61B | (BCW61x) Surface Mount General Purpose Si-Epi-Planar Transistors BCW61A ... BCW61D
BCW61A ... BCW61D PNP
Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation – Verlustleistung
2.9 ±0.1 |
Diotec Semiconductor |
|
BCW61B | Small Signal Transistors BCW61 Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (PNP)
TO-236AB (SOT-23)
.122 (3.1) .110 (2.8) .016 (0.4) 3
Top View
Mounting Pad Layout
.056 (1.43) .052 |
Vishay |
|
BCW61B | PNP TRANSISTOR RoHS BCW61B SOT-23 Plastic-Encapsulate Transistors
BCW61B DFEATURES
TRANSISTOR (PNP)
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
TPower dissipation
1. 0
.,LPCM: 0.25 W (Tamb=25℃)
Collector current
OICM: -0 |
WEJ |
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