BCR8PM-14 डाटा शीट PDF( Datasheet )

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8PM-14 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8PM-14 OUTLINE DRAWING Dimensions in mm 10.5 MAX 5.2 1.2 2.8 5.0 17 8.5 V TYPE NAME φ3.2

BCR8PM-14L Triac Medium Power Use REJ03G0308-0100 Rev.1.00 Aug.20.2004 Features • IT (RMS) : 8 A • VDRM : 700 V www.DataSheet4U.com • IFGTI, IRGTI, IRGTⅢ : 30 mA (20 mA)Note5 • Viso : 2000 V • Insu

isc Thyristors INCHANGE Semiconductor BCR8PM-14L DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and

BCR8PM-14LD Triac Medium Power Use Features  IT (RMS) : 8 A  VDRM : 700 V  IFGTI , IRGTI, IRGT III : 50 mA  Viso : 2000 V Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F ) Prelimi

BCR8PM-14LE 700V – 8A - Triac Medium Power Use Features • IT (RMS) : 8 A • VDRM : 700 V • IFGTI, IRGTI, IRGTIII : 30 mA • Viso : 1500 V Outline RENESAS Package code: PRSS0003AA-B (Package name: TO-220

BCR8PM-14LG Triac Medium Power Use Features  IT (RMS) : 8 A  VDRM : 800 V (Tj = 125C)  IFGTI, IRGTI, IRGT III : 30 mA  Viso : 2000 V Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-2

isc Thyristors INCHANGE Semiconductor BCR8PM-14LG DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance an