BCR8PM डाटा शीट PDF( Datasheet )

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8PM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8PM OUTLINE DRAWING 10.5 MAX 5.2 Dimensions in mm 2.8 17 5.0 1.2 TYPE NAME VOLTAGE CLASS φ3.2±0.

BCR8PM Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Triac 8 Amperes/400-600 Volts OUTLINE DRAWING C 5.2 1.2 D J A E H Description: A triac is a solid state silicon

BCR8PM-12L Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C) REJ03G0461-0200 Rev.2.00 Nov.08.2004 Features T (RMS) www.DataSheet4U.com • I :8A • VDRM : 600 V • IFGTI

isc Thyristors INCHANGE Semiconductor BCR8PM-12LA DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance an

BCR8PM-12LA Triac Medium Power Use Preliminary Datasheet R07DS0101EJ0300 (Previous: REJ03G0303-0200) Rev.3.00 Sep 13, 2010 Features  IT (RMS) : 8 A  VDRM : 600 V  IFGTI, IRGTI, IRGT III : 30 mA (20 m

BCR8PM-12LD Triac Medium Power Use Features  IT (RMS) : 8 A  VDRM : 600 V  IFGTI , IRGTI, IRGT III : 50 mA  Viso : 2000 V Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F ) Prelimi

BCR8PM-12LE 600V – 8A - Triac Medium Power Use Features • IT (RMS) : 8 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA • Viso : 1500 V Outline RENESAS Package code: PRSS0003AA-B (Package name: TO-22