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BCR12PM | TRIAC MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR12PM
OUTLINE DRAWING
10.5 MAX 5.2
Dimensions in mm
2.8
17 5.0
1.2
TYPE NAME VOLTAGE CLASS
φ3.2± |
Mitsubishi Electric Semiconductor |
|
BCR12PM | TRIAC BCR12PM
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
Isolated Triac
12 Amperes/400-600 Volts
OUTLINE DRAWING
C 5.2
1.2 D
J
A
E H
Description: A triac is a solid sta |
Powerex Power Semiconductors |
|
BCR12PM-12 | Three quadrant triac TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
BCR12PM
Three quadrant triacs
Description
Passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and |
HAOPIN |
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BCR12PM-12LA | Thyristor isc Thyristors
INCHANGE Semiconductor
BCR12PM-12LA
DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance
a |
INCHANGE |
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BCR12PM-12LA | Triac BCR12PM-12LA
Triac
Medium Power Use
Preliminary Datasheet
R07DS0107EJ0300 (Previous: REJ03G0305-0200)
Rev.3.00 Sep 13, 2010
Features
IT (RMS) : 12 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 30 mA (20 |
Renesas |
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BCR12PM-12LB | Triac Preliminary Datasheet
BCR12PM-12LB
Triac
R07DS0108EJ0300
Medium Power Use
(Previous: REJ03G0463-0200)
Rev.3.00
(The product guaranteed maximum junction temperature of 150C)
Sep 13, 2010
Features
� |
Renesas |
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BCR12PM-12LC | Triac BCR12PM-12LC
Triac
Medium Power Use
Features
• IT (RMS) : 12 A • VDRM : 600 V • IFGTI, IRGTI, IRGTIII : 50 mA • Viso : 1500 V
Outline
RENESAS Package code: PRSS0003AA-B (Package name: TO-220F(2) )
REJ0 |
Renesas |
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