डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BCR12CM | TRIAC MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR12CM
OUTLINE DRAWING
10.5 MAX
3.2±0.2
Dimensions in mm
4.5 4
1.3
16 MAX
∗
12.5 MIN 3.8 MA |
Mitsubishi Electric Semiconductor |
|
BCR12CM | Triac BCR12CM
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
Triac
12 Amperes/400-600 Volts
OUTLINE DRAWING
C
D
E L
A
H F
лG
Description: A triac is a solid state sil |
Powerex Power Semiconductors |
|
BCR12CM-12LA | Triac BCR12CM-12LA
Triac
Medium Power Use
Features
• IT (RMS) : 12 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6
Outline
REJ03G0297-0300 Rev.3.00
Nov 30, 2007
• Non-Insulated Type • Planar |
Renesas |
|
BCR12CM-12LB | Triac BCR12CM-12LB
600V - 12A - Triac
Medium Power Use
Features
• IT (RMS) : 12 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III: 30 mA (20 mA) Note6
Data Sheet
R07DS1030EJ0500 Rev.5.00
Jun. 28, 2018
• Tj: 150°C |
Renesas |
|
BCR12CM-12LB | Thyristor isc Thyristors
BCR12CM-12LB
DESCRIPTION ·With TO-220 packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
A |
INCHANGE |
|
BCR12CM-12LG | Thyristor isc Thyristors
BCR12CM-12LG
DESCRIPTION ·With TO-220 packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
A |
INCHANGE |
|
BCR12CM-16LH | Triac BCR12CM-16LH
800V - 12A - Triac
Medium Power Use
Features
• IT (RMS) : 12 A • VDRM : 800 V • IFGTI, IRGTI, IRGT III: 50 mA or 35 mA(IGT item:1)
Data Sheet
R07DS0261EJ0300 Rev.3.00
Feb. 1, 2019
• Tj: 15 |
Renesas |
www.DataSheet.in | 2017 | संपर्क |