डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BC847S | Dual NPN Small Signal Surface Mount Transistor Production specification
Dual NPN Small Signal Surface Mount Transistor
FEATURES
Epitaxial planar die construction. Ultra-small surface mount package.
Pb
Lead-free
BC847S
APPLICATIONS
Dual NPN |
GME |
|
BC847S | SMD General Purpose NPN Transistors BC846S, BC847S
BC846S, BC847S SMD General Purpose NPN Transistors
SMD Universal-NPN-Transistoren
IC = 100 mA hFE = 200...450 Tjmax = 150°C
VCEO = 45 V, 65 V Ptot = 250 mW
Version 2018-02-07
SOT-363
2±0. |
Diotec |
|
BC847S | NPN Silicon AF Transistor NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated transistors
with good mat |
Infineon Technologies AG |
|
BC847S | NPN Multi-Chip General Purpose Amplifier BC847S
BC847S
E2 B2 C1
SC70-6
Mark: 1C
pin #1
C2 B1 E1
NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the f |
Fairchild Semiconductor |
|
BC847S | DUAL TRANSISTOR JC(T
JIANGS U CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
BC847S DUAL TRANSISTOR (NPN+NPN)
APPLICATION This device is designed for general purpose amplifier application |
JCET |
|
BC847S | NPN Transistor RoHS BC847S
Multi-Chip TRANSISTOR (NPN)
SOT-363
FEATURES Power dissipation
DPCM : 300 mW (Tamb=25℃)
TCollector current
.,LICM : 200 mA
Collector-base voltage
V(BR)CBO : 50
V
Operating and storage ju |
WILLAS |
|
BC847S | NPN Multi-Chip General Purpose Amplifier SMD Type
Transistors
NPN Multi-Chip General Purpose Amplifier KC847S(BC847S)
Features
High current gain Low collector-emitter saturation voltage
SOT-363
1.3+0.1 -0.1 0.65
Unit: mm
0.525
+0.11.25 -0.1
+0 |
Kexin |
www.DataSheet.in | 2017 | संपर्क |