डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BAW101V | HIGH VOLTAGE DUAL SWITCHING DIODE Features
• Fast Switching Speed: Maximum of 50ns • High Reverse Breakdown Voltage: 325V for Single Diode or
650V for Series Connection • Two Electrically Isolated Elements in a Single Compact Package • |
Diodes |
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BAW101 | HIGH VOLTAGE SWITCHING DIODE | Central Corp |
|
BAW101 | High Voltage Double Diode | LGE |
|
BAW101S | High voltage double diode | NXP |
|
BAW101 | DUAL SURFACE MOUNT SWITCHING DIODE | Diodes |
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BAW101 | Silicon Switching Diode | Siemens Group |
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BAW101V | HIGH VOLTAGE DUAL SWITCHING DIODE | Diodes |
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BAW101S | HIGH VOLTAGE DUAL SWITCHING DIODE | Diodes |
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BAW101 | Silicon Switching Diode | Infineon Technologies AG |
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BAW101 | Silicon Switching Diode Array | Kexin |
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BAW101 | High voltage double diode | NXP |
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