BAW101S डाटा शीट PDF( Datasheet )

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BAW101S High voltage double diode Product data sheet 2003 May 13 NXP Semiconductors High voltage double diode Product data sheet BAW101S FEATURES

NEW PRODUCT Features • Fast Switching Speed: max. 50ns • High Reverse Breakdown Voltage: 300V • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current: 150nA at Room Tempe

SMD Type High Voltage Double Diode BAW101S Diodes +0.11.25 -0.1 Features Small plastic SMD package High switching speed: max. 50 ns High continuous reverse voltage: 300 V Electrically insulated diodes. 0.1