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Siemens Semiconductor Group |
Silicon Schottky Diodes Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Breakdown voltage Values typ. max. Unit V(BR) 8 318 390 - V µA 0.1 1.2 mV 340 340 500 pF 1 Ω 10 I(BR) = 100 µA Reverse current IR VR = 1 |
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Infineon Technologies AG |
Silicon Schottky Diodes Junction - soldering point1) BAT68 BAT68-04, BAT68-06 BAT68-04W-BAT68-06W, BAT68-08S BAT68-07W Symbol RthJS Value 8 130 150 150 150 150 150 -55 ... 150 Value ≤ 490 ≤ 590 ≤ 390 ≤ 410 Unit V mA mW °C Unit K/W Electrical Characteristics at TA = 25° |
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