| No. | Partie # | Fabricant | Description | Fiche Technique |
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Siemens Semiconductor Group |
Silicon Schottky Diode Diode capacitance CT 5.5 0.35 pF Ω - VR = 0 , f = 1 MHz Differential forward resistance RF IF 10mA/ 50 mA Semiconductor Group 2 Mar-19-1996 BAT 15-03W Forward Current IF = f(VF) Reverse current IR = f (TA) Diode capacitance CT = f (VR) f |
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Infineon Technologies AG |
Silicon Schottky Diode 15-099, TS ≤ 48 °C BAT15-099R, TS ≤ 67 °C VR IF Ptot Junction temperature Operating temperature range Storage temperature Tj Top Tstg Thermal Resistance Parameter Junction - soldering point1) BAT15-02ELS BAT15-02EL BAT15-03W BAT15-04W BAT15-05W |
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