| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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WILLAS |
200mW Plastic-Encapsulate Schottky Barrier Diodes Low Forward Voltage Fast Switching Moisture Sensitivity Level 1 Maximum Ratings @Ta=25℃ Parameter Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage Forward continuous current Power dissipation Thermal resist |
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CITC |
200mA Surface Mount Small Signal Diodes • Low current rectification and high speed switching. • Small surface mount type. • Up to 200mA current capability. • Low forward voltage drop (VF = 1.00V typ. @40mA). • Silicon epitaxial planar chip, metal silicon junction. • Suffix "G" indicates Ha |
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CITC |
200mA Surface Mount Small Signal Diodes • Low current rectification and high speed switching. • Small surface mount type. • Up to 200mA current capability. • Low forward voltage drop (VF = 1.00V typ. @40mA). • Silicon epitaxial planar chip, metal silicon junction. • Suffix "G" indicates Ha |
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|
CITC |
200mA Surface Mount Small Signal Diodes • Low current rectification and high speed switching. • Small surface mount type. • Up to 200mA current capability. • Low forward voltage drop (VF = 1.00V typ. @40mA). • Silicon epitaxial planar chip, metal silicon junction. • Suffix "G" indicates Ha |
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|
WILLAS |
200mW Plastic-Encapsulate Schottky Barrier Diodes Low Forward Voltage Fast Switching Moisture Sensitivity Level 1 Maximum Ratings @Ta=25℃ Parameter Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage Forward continuous current Power dissipation Thermal resist |
|
|
|
|
WILLAS |
200mW Plastic-Encapsulate Schottky Barrier Diodes Low Forward Voltage Fast Switching Moisture Sensitivity Level 1 Maximum Ratings @Ta=25℃ Parameter Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage Forward continuous current Power dissipation Thermal resist |
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Vishay Siliconix |
Small Signal Schottky Diodes • These diodes feature very low turn-on voltage and fast switching • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and |
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|
WILLAS |
200mW Plastic-Encapsulate Schottky Barrier Diodes Low Forward Voltage Fast Switching Moisture Sensitivity Level 1 Maximum Ratings @Ta=25℃ Parameter Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage Forward continuous current Power dissipation Thermal resist |
|
|
|
|
CITC |
200mA Surface Mount Small Signal Diodes • Low current rectification and high speed switching. • Small surface mount type. • Up to 200mA current capability. • Low forward voltage drop (VF = 1.00V typ. @40mA). • Silicon epitaxial planar chip, metal silicon junction. • Suffix "G" indicates Ha |
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|
Vishay |
Small Signal Schottky Diodes • These diodes feature very low turn-on voltage and fast switching Available • These devices are protected by a PN junction guardring against excessive voltage, such as electrostatic discharges • AEC-Q101 qualified available • Molding compound m |
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Vishay |
Small Signal Schottky Diodes • These diodes feature very low turn-on voltage and fast switching • These devices are protected by a PN junction guardring against excessive voltage, such as electrostatic discharges • AEC-Q101 qualified available (part number on request) • Base P/ |
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