BAS31 डाटा शीट PDF( Datasheet )

BAS31 Discrete POWER & Signal Technologies BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 1 2 1 2 SOT-23 1 High Voltage General Purpose Diode Sourced from Process 1H. See BAV19 / 20 / 21 for characteristics. Abs

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche (double) diodes Product data sheet Supersedes data of 2001 Oct 10 2003 Mar 20 NXP Semiconduc

BAS31, BAS35 BAS31, BAS35 SMD Small Signal Diodes SMD Kleinsignal-Dioden IFAV VF1 Tjmax = 200 mA < 0.750 V = 150°C VRRM IFSM1 trr = 120 V =2A < 50 ns Version 2018-01-26 SOT-23 (TO-236) Typical Applicat

BAS29, BAS31, BAS35 Silicon Epitaxial Planar Switching Diodes BAS29 3 BAS31 3 BAS35 3 12 12 12 BAS29 Marking Code: L20 BAS31 Marking Code: L21 BAS35 Marking Code: L22 SOT-23 Plastic Package Absolute Max

Silicon Epitaxial Planar Diode FEATURES  Very small plastic SMD package  High switching speed:max.4ns Pb Lead-free  Continuous reverse voltage:max.100v  Repetitive peak reverse voltage:max.100v

BAS16 series High-speed switching diodes Rev. 6 — 24 September 2014 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (

Certificate TH97/10561QM Certificate TW00/17276EM BAS316 PRV : 100 Volts Io : 250 mA HIGH SPEED DIODE SOD-323 1.80 1.60 0.40 0.25 1.35 1.15 FEATURES : * Very small plastic SMD package * High switching spe