डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AS4C4M4 | 16M FPM DRAM 16 Me g FPM DRAM Meg
Austin Semiconductor, Inc. 4M x 4 CMOS DRAM
WITH FAST PAGE MODE, 5 VOLT
AVAILABLE AS MILITARY SPECIFICATIONS
• MIL-STD-883
Vcc DQ0 DQ1 W RAS NC
AS4C4M4
PIN ASSIGNMENT (Top View)
24 Pin T |
Austin Semiconductor |
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AS4C4M4E0 | 4M x 4 CMOS DRAM w
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Alliance Semiconductor |
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AS4C4M4E1 | 4M x 4 CMOS DRAM May 2001
®
AS4C4M4E1
4M×4 CMOS DRAM (EDO) family Features
• Organization: 4,194,304 words × 4 bits • High speed
- 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access ti |
Alliance Semiconductor |
|
AS4C4M4F0 | 5V 4M x 4 CMOS DRAM ®
5V 4M×4 CMOS DRAM (Fast Page mode)
AS4C4M4F0 AS4C4M4F1
Features
• Organization: 4,194,304 words × 4 bits • High speed
- 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS a |
Alliance Semiconductor |
|
AS4C4M4F1 | 5V 4M x 4 CMOS DRAM ®
5V 4M×4 CMOS DRAM (Fast Page mode)
AS4C4M4F0 AS4C4M4F1
Features
• Organization: 4,194,304 words × 4 bits • High speed
- 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS a |
Alliance Semiconductor |
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