APT66F60L डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 90mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var

APT66F60B2 APT66F60L 600V, 70A, 0.09Ω Max, trr ≤ 310ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent