APT38N60BC6 डाटा शीट PDF( Datasheet )

APT38N60BC6 APT38N60SC6 600V 38A 0.099Ω COOLMOS Power Semiconductors Super Junction MOSFET • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extre

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=38A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.099Ω(Max) ·100% avalanche tested ·Minim