APT30M61BLL डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=54A@ TC=25℃ ·Drain Source Voltage- : VDSS=300V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.061Ω(Max) ·100% avalanche tested ·Minim

APT30M61BLL APT30M61SLL 300V 54A 0.061Ω POWER MOS 7 R MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are