APT18M80B डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=19A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.53Ω(Max) ·100% avalanche tested ·Minimu

APT18M80B APT18M80S 800V, 19A, 0.53Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and m