APT17 डाटा शीट PDF( Datasheet )

Features  BVCEO > 480V  BVCES > 700V  BVEBO > 10V  IC = 50mA High Collector Current  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note

APT17F100B APT17F100S www.DataSheet4U.com 1000V, 17A, 0.80Ω Max, trr ≤245ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a dr

APT17F100B APT17F100S www.DataSheet4U.com 1000V, 17A, 0.80Ω Max, trr ≤245ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a dr

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.58Ω(Max) ·100% avalanche tested ·Mini

APT17F80B APT17F80S 800V, 18A, 0.58Ω Max, trr ≤250ns N-Channel FREDFET POWER MOS 8® is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode

APT17F80B APT17F80S 800V, 18A, 0.58Ω Max, trr ≤250ns N-Channel FREDFET POWER MOS 8® is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode

APT17N80BC3 APT17N80SC3 www.DataSheet4U.com 800V 17A 0.290Ω D3PAK Super Junction MOSFET C O OLMOS Power Semiconductors TO-247 • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Q