APM2301 डाटा शीट PDF( Datasheet )

APM2301 P-Channel Enhancement Mode MOSFET Features Pin Description • -20V/-2.8A , RDS(ON)=72mΩ(typ.) @ V =-10V GS RDS(ON)=100mΩ(typ.) @ V =-4.5V GS • Super High Dense Cell Design for Extrem

APM2301A Features • -20V/-2.8A, RDS(ON)=72mΩ(typ.) @ VGS=-10V RDS(ON)=98mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compli

APM2301CA Features • -20V/-3A RDS(ON)= 70mΩ (max.) @ VGS= -4.5V RDS(ON)= 115mΩ (max.) @ VGS= -2.5V R= DS(ON) 250mΩ (max.) @ V= GS -1.8V • Reliable and Rugged • Lead Free and Green Device