APM2014N डाटा शीट PDF( Datasheet )

APM2014N N-Channel Enhancement Mode MOSFET Features • • • • 20V/30A , RDS(ON)=12mΩ(typ.) @ VGS=4.5V RDS(ON)=18mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and

APM2014NU N-Channel Enhancement Mode MOSFET Features • 20V/40A, RDS(ON)=12mΩ (typ.) @ VGS=4.5V RDS(ON)=18mΩ (typ.) @ VGS=2.5V Pin Description G D S • • • Super High Dense Cell Design Reliable