डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
APEHT-0103 | High Temperature Silicon Carbide Schottky Diode PRELIMINARY
APE HT-0103 High Temperature Silicon Carbide Schottky Diode
FEATURES
High temperature: Tc(max) = 225 C
1200 V / 10 A / 64 nC
Tj(max) = 225 C
AS9100:Rev. C-certified manufacturing, |
APEI |
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APEHT-0103 | High Temperature Silicon Carbide Schottky Diode | APEI |
www.DataSheet.in | 2017 | संपर्क |