AOW298 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOW298 ·FEATURES ·Drain Current –ID= 58A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 14.5mΩ(Max) ·100% avalanche t

AOW298 100V N-Channel MOSFET General Description Product Summary The AOW298 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power