डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AOTF286L | N-Channel MOSFET isc N-Channel MOSFET Transistor
AOTF286L
·FEATURES ·Drain Current –ID= 56A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 80V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 6.0mΩ(Max) ·100% avalanche t |
INCHANGE |
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AOTF286L | 80V N-Channel MOSFET AOTF286L
80V N-Channel MOSFET
General Description
• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications
Product Summary
VDS ID (at VGS=10V) RD |
Alpha & Omega Semiconductors |
www.DataSheet.in | 2017 | संपर्क |