No. | Partie # | Fabricant | Description | Fiche Technique |
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Alpha & Omega Semiconductors |
N-Channel Power Transistor °C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt ±30 14 14* 9 9* 56 3.6 6.5 6 |
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