AOTF11N62 डाटा शीट PDF( Datasheet )

AOTF11N62 620V,11A N-Channel MOSFET General Description Product Summary The AOTF11N62 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance

isc N-Channel MOSFET Transistor AOTF11N62 FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 620V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) ·100% avalanche t