| No. | Partie # | Fabricant | Description | Fiche Technique |
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Alpha & Omega Semiconductors |
600V N-Channel MOSFET VDS (V) = 700V @ 150°C ID = 2.5A RDS(ON) < 3.5 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss, C oss , C rss Tested! Top View D TO-220 G G S D S Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum Parameter Symbol VDS Drain-Sou |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =3.5Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
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