| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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Alpha & Omega Semiconductors |
N-Channel Power Transistor rrent C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt ±30 12 12* 7.6 7.6* 48 3.4 5.8 50 100 20 TC=25°C Power Diss |
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