AOK27S60L डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOK27S60L ·FEATURES ·Drain Current –ID= 27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.16Ω(Max) ·100% avalanche

AOK27S60L 600V 27A α MOS TM Power Transistor General Description Product Summary The AOK27S60L has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of