AOK10N90 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOK10N90 FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.98Ω(Max) ·100% avalanche test

AOK10N90 900V,10A N-Channel MOSFET General Description The AOK10N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular