AOI9N50 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOI9N50 FEATURES ·Drain Current –ID= 9.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.86Ω(Max) ·100% avalanche test

AOD9N50/AOI9N50 500V,9A N-Channel MOSFET General Description Product Summary The AOD9N50 & AOI9N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels o