डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AOI4T60P | N-Channel MOSFET isc N-Channel MOSFET Transistor
AOI4T60P
FEATURES ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =2.1Ω(Max) ·100% avalanche test |
INCHANGE |
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AOI4T60P | 4A N-Channel MOSFET AOD4T60P/AOI4T60P
600V,4A N-Channel MOSFET
General Description
• Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant
Pro |
Alpha & Omega Semiconductors |
www.DataSheet.in | 2017 | संपर्क |