AOI4T60 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOI4T60 FEATURES ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2.1Ω(Max) ·100% avalanche teste

AOD4T60/AOI4T60 600V,4A N-Channel MOSFET General Description Product Summary The AOD4T60 & AOI4T60 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of perf

isc N-Channel MOSFET Transistor AOI4T60P FEATURES ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2.1Ω(Max) ·100% avalanche test

AOD4T60P/AOI4T60P 600V,4A N-Channel MOSFET General Description • Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant Pro