डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AOD417 | P-Channel MOSFET AOD417 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellen |
Alpha & Omega Semiconductors |
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AOD417 | N-Channel MOSFET isc P-Channel MOSFET Transistor
AOD417
FEATURES ·Drain Current –ID=-25A@ TC=25℃ ·Drain Source Voltage-
: VDSS=-30V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 34mΩ(Max) ·100% avalanche tested |
INCHANGE |
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