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AOD410 | N-Channel MOSFET www.DataSheet4U.com
Rev3: Nov 2004
AOD410, AOD410L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD410 uses advanced trench technology to provide excellent RDS( |
Alpha & Omega Semiconductors |
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AOD4100 | N-Channel MOSFET AOD4100 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4100 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. Th |
Alpha & Omega Semiconductors |
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AOD4102 | 30V N-Channel MOSFET AOD4102/AOI4102
30V N-Channel MOSFET
General Description
The AOD4102/AOI4102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM |
Alpha & Omega Semiconductors |
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AOD4102 | N-Channel MOSFET isc N-Channel MOSFET Transistor
AOD4102
FEATURES ·Drain Current –ID= 19A@ TC=25℃ ·Drain Source Voltage-
: VDSS=30V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =37mΩ(Max) ·100% avalanche tested |
INCHANGE |
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AOD4104 | N-Channel MOSFET AOD4104 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4104 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. Th |
Alpha & Omega Semiconductors |
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AOD4106 | N-Channel MOSFET AOD4106 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4106 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a low |
Alpha & Omega Semiconductors |
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AOD410L | N-Channel MOSFET Rev3: Nov 2004
AOD410, AOD410L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD410 uses advanced trench technology to provide excellent RDS(ON) and low gate char |
Alpha & Omega Semiconductors |
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