AOD3T40P डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOD3T40P FEATURES ·Drain Current –ID= 2.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) =3.3Ω(Max) ·100% avalanche test

AOD3T40P 400V,2A N-Channel MOSFET General Description • Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant Product Summ