डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AOD3N60 | N-Channel MOSFET AOD3N60/AOU3N60
600V,2.5A N-Channel MOSFET
General Description
The AOD3N60 & AOU3N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance an |
Alpha & Omega Semiconductors |
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AOD3N60 | N-Channel MOSFET isc N-Channel MOSFET Transistor
AOD3N60
FEATURES ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =3.5Ω(Max) ·100% avalanche teste |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |