डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AOD2910 | N-Channel MOSFET isc N-Channel MOSFET Transistor
AOD2910
·FEATURES ·Drain Current –ID= 31A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 24mΩ(Max) ·100% avalanche te |
INCHANGE |
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AOD2910 | N-Channel MOSFET AOD2910
100V N-Channel MOSFET
General Description
The AOD2910 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and sw |
Alpha & Omega Semiconductors |
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AOD2910E | N-Channel MOSFET AOD2910E
100V N-Channel MOSFET
General Description
• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • ESD protected • Optimized for fast-switching applications
Applications
• Syn |
Alpha & Omega Semiconductors |
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AOD2910E | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With TO-252( DPAK ) packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for rob |
INCHANGE |
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