डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AIMBG120R010M1 | MOSFET AIMBG120R010M1
CoolSiC™ 1200 V SiC Trench MOSFET
CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET
PG-TO263-7-HV-ND5.8
Features • VDSS = 1200 V at Tvj = -55...175 °C • IDDC = 205A at TC = 2 |
Infineon |
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AIMBG120R010M1 | MOSFET | Infineon |
www.DataSheet.in | 2017 | संपर्क |