डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
A5G35H120N | Airfast RF Power GaN Transistor A5G35H120N
Airfast RF Power GaN Transistor
Rev. 2 — April 2023
This 18 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous band |
NXP |
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A5G35H120N | Airfast RF Power GaN Transistor | NXP |
www.DataSheet.in | 2017 | संपर्क |