डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
A5G23H065N | Airfast RF Power GaN Transistor A5G23H065N
Airfast RF Power GaN Transistor
Rev. 1 — November 2022
This 8.8 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous |
NXP |
|
A5G23H065N | Airfast RF Power GaN Transistor | NXP |
www.DataSheet.in | 2017 | संपर्क |