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A3G26H502W17S | RF Power GaN Transistor NXP Semiconductors Technical Data
Document Number: A3G26H502W17S Rev. 1, 01/2021
RF Power GaN Transistor
This 80 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applicati |
NXP |
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A3G26H502W17S | RF Power GaN Transistor | NXP |
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