डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
A-GA10JT12 | Super Junction Transistor Device under development
A-GA10JT12
Normally – OFF Silicon Carbide Super Junction Transistor
VDS I
D
RDS(ON)
= 1200 V
= 7A = 220 mȍ
Features
• 225 oC maximum operating temperature •Best in class te |
GeneSiC |
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A-GA10JT12 | Super Junction Transistor | GeneSiC |
www.DataSheet.in | 2017 | संपर्क |