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ST Microelectronics |
SERIAL ACCESS SPI BUS 4K 512 x 8 EEPROM interrupted with a hold input (HOLD). The write operation is disabled by a write protect input (W). Table 1. Signal Names C D Q S W HOLD VCC VSS Serial Clock Serial Data Input Serial Data Output Chip Select Write Protect Hold Supply Voltage Ground |
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CET |
P-Channel MOSFET -40V, -93A, RDS(ON) =8.4mΩ @VGS = -10V. RDS(ON) =12mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(D |
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CET |
P-Channel MOSFET -40V, -77A, RDS(ON) =8.6mΩ @VGS = -10V. RDS(ON) =12mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252 |
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STMicroelectronics |
SERIAL ACCESS SPI BUS 4K 512 x 8 EEPROM • Single supply with programming operation down to 2.5V • Low power CMOS technology - 1 mA active current typical - 5 µA standby current (typical) at 3.0V • x16 memory organization - 128x16 (93LCS56) - 256x16 (93LCS66) • Software write protection of |
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CET |
P-Channel MOSFET -40V, -93A, RDS(ON) =8.4mΩ @VGS = -10V. RDS(ON) =12mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(D |
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CET |
P-Channel MOSFET -40V, -77A, RDS(ON) =8.6mΩ @VGS = -10V. RDS(ON) =12mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252 |
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