8N65 डाटा शीट PDF( Datasheet )

isc N-Channel Mosfet Transistor INCHANGE Semiconductor 8N65 ·FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max)

8N65(F,B,H) 8A mps,650 Volts N-CHANNEL MOSFET FEATURE  8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220A

UNISONIC TECHNOLOGIES CO., LTD 8N65 8A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching t

UNISONIC TECHNOLOGIES CO., LTD 8N65-ML 8A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N65-ML is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, su

8N65(F,B,H) 8A mps,650 Volts N-CHANNEL MOSFET FEATURE  8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220A

8N65(F,B,H) 8A mps,650 Volts N-CHANNEL MOSFET FEATURE  8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220A

8N65(F,B,H) 8A mps,650 Volts N-CHANNEL MOSFET FEATURE  8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220A