| No. | Partie # | Fabricant | Description | Fiche Technique |
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BI Technologies |
(898-Series) Dual-In-Line Thick Film Resistor Networks jumper Specifications subject to change without notice. w 4-161 w w .D a S a t ∆R 0.70% ∆R 0.50% ∆R 0.25% ∆R 0.50% ∆R 0.25% ∆R 0.25% ∆R 0.25% ∆R 0.50% ∆R 1.00% ∆R 0.25% 200V rms for 1 minute 215°C for 3 minutes MIL-STD-202, Method 215 MIL-STD- |
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BI Technologies |
(898-Series) Dual-In-Line Thick Film Resistor Networks jumper Specifications subject to change without notice. w 4-161 w w .D a S a t ∆R 0.70% ∆R 0.50% ∆R 0.25% ∆R 0.50% ∆R 0.25% ∆R 0.25% ∆R 0.25% ∆R 0.50% ∆R 1.00% ∆R 0.25% 200V rms for 1 minute 215°C for 3 minutes MIL-STD-202, Method 215 MIL-STD- |
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BI Technologies |
(898-Series) Dual-In-Line Thick Film Resistor Networks jumper Specifications subject to change without notice. w 4-161 w w .D a S a t ∆R 0.70% ∆R 0.50% ∆R 0.25% ∆R 0.50% ∆R 0.25% ∆R 0.25% ∆R 0.25% ∆R 0.50% ∆R 1.00% ∆R 0.25% 200V rms for 1 minute 215°C for 3 minutes MIL-STD-202, Method 215 MIL-STD- |
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InterFET Corporation |
(SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors – 2.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 0.01 – 0.01 – 0.01 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 30 – 30 – 30 – 30 – 30 – 15 – 30 – 30 – 20 – 30 – 20 – 20 |
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