8810 डाटा शीट PDF( Datasheet )

HM8810E Dual N-Channel Enhancement Mode Power MOSFET Description The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 8810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The 8810 uses advanced trench technology to provide excellent R