| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
N-channel Power MOSFET TAB 2 3 1 D 2 PAK TAB 3 1 DPAK Order codes VDS @ Tjmax RDS(on) max. ID STB7ANM60N STD7ANM60N 650 V 0.9 Ω 5A • Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low ga |
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STMicroelectronics |
N-channel Power MOSFET TAB 2 3 1 D 2 PAK TAB 3 1 DPAK Order codes VDS @ Tjmax RDS(on) max. ID STB7ANM60N STD7ANM60N 650 V 0.9 Ω 5A • Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low ga |
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INCHANGE |
N-Channel MOSFET ·With TO-252(DPAK) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supp |
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STMicroelectronics |
N-channel Power MOSFET Order code STB7ANM60N STD7ANM60N VDS RDS(on) max. ID 600 V 0.9 Ω 5A • AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Package D²PAK DPAK G(1) S(3) Applications • Switching appli |
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INCHANGE |
N-Channel MOSFET ·With TO-263(D2PAK) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power sup |
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