डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
3SK322 | Silicon N-Channel Dual Gate MOS FET 3SK322
Silicon N-Channel Dual Gate MOS FET
ADE-208-712A (Z) 2nd. Edition Dec. 1998 Application
UHF / VHF RF amplifier
Features
• Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage |
Hitachi Semiconductor |
|
3SK322 | Silicon N-Channel Dual Gate MOS FET | Hitachi Semiconductor |
|
3SK320 | N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP/ MIX) | Toshiba Semiconductor |
|
3SK321 | Silicon N-Channel Dual Gate MOS FET | Hitachi Semiconductor |
www.DataSheet.in | 2017 | संपर्क |