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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
3SK296 | Silicon N-Channel Dual-Gate MOSFET 3SK296
Silicon N-Channel Dual Gate MOS FET
ADE-208-388 1st. Edition
Application
UHF RF amplifier
Features
• Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation
Outline
C |
Hitachi Semiconductor |
|
3SK296 | N-Channel Dual-Gate MOSFET 3SK296
Silicon N-Channel Dual Gate MOS FET
Application
UHF RF amplifier
Features
• Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz
• Capable of low voltage operation
REJ03G0815-0300 (Previous ADE-208-388 |
Renesas |
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