3SK290 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 3SK290 | Silicon N-Channel Dual Gate MOS FET 3SK290
Silicon N-Channel Dual Gate MOS FET
ADE-208-271 1st. Edition
Application
UHF RF amplifier
Features
· Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz · High gain. PG = 19.3 dB Typ. at f = 900 MHz
|
 Hitachi Semiconductor |
|
| 3SK299 | RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD |  NEC |
|
| 3SK294 | Silicon N-Channel Dual Gate MOS Type FET |  Toshiba Semiconductor |
|
| 3SK291 | Silicon N-Channel Dual Gate MOS Type FET | Toshiba Semiconductor |
|
| 3SK293 | Silicon N-Channel Dual Gate MOS Type FET | Toshiba Semiconductor |
|
| 3SK296 | Silicon N-Channel Dual-Gate MOSFET | Hitachi Semiconductor |
|
| 3SK297 | Silicon N-Channel Dual Gate MOS FET | Hitachi Semiconductor |
|
| 3SK298 | Silicon N-Channel Dual Gate MOS FET | Hitachi Semiconductor |
|
| 3SK295 | Silicon N-Channel Dual Gate MOS FET | Hitachi Semiconductor |
|
| 3SK292 | Silicon N-Channel Dual Gate MOS Type FET | Toshiba Semiconductor |
|
| 3SK296 | N-Channel Dual-Gate MOSFET |  Renesas |
शेयर लिंक :
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